Room temperature particle detectors based on indium phosphide

被引：2

作者：

Yatskiv, R. ^{[1
]}

Grym, J. ^{[1
]}

Zdansky, K. ^{[1
]}

Pekarek, L. ^{[1
,2
]}

机构：

[1] Acad Sci Czech Republic, Inst Photon & Elect, CR-18251 Prague 8, Czech Republic

[2] Acad Sci Czech Republic, Inst Phys, Prague 18221 8, Czech Republic

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2010年 / 612卷 / 02期

关键词：

Semi-insulating InP; High purity InP layers; Particle detector; SEMIINSULATING INP; TI; PERFORMANCE; GAMMA; ZN;

D O I：

10.1016/j.nima.2009.10.172

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A study of electrical properties and detection performance of particle detectors based on bulk InP and semiconducting LPE layers operated at room temperature is presented. Bulk detectors were fabricated on semi-insulating InP crystals grown by liquid-encapsulated Czochralski (LEC) technique. High purity InP layers of both n- and p-type conductivity were used to fabricate detector structures with p-n junction. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from Am-241 source at room temperature. Better noise properties were achieved for detectors with p-n junctions due to better quality contacts on p-type layers. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：334 / 337

页数：4

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