Acceptor Binding Energies in a GaMnAs Quantum Well

Within the framework of a single band effective mass approximation, the binding energy of an acceptor in a diluted magnetic semiconductor of a quantum well of GaAs/Ga1-xMnxAs/GaAs is calculated. Calculations have been performed for light holes and heavy holes states The spin polarization which is the free carrier two dimensional sheet concentrations is calculated for the valence band holes. Spin polaronic effect is estimated using a mean field theory with the Brillouin function. We present a theoretical study of diluted magnetic semiconductors treating the local p-d exchange interaction J between the itinerant carriers and the Mn electrons within a realistic band structure The results show that (i) spin polaronic effect raises the binding energy and this feature predominantly occurs only for narrow wells, (ii) the variation of increase in binding energy is higher for smaller wells due to the confinement and it increases with the concentration of Mn ions and (iii) the sharp variation of sheet concentration has been observed for smaller well widths These results are discussed with the available data in the literature