On p-type doping in GaN - acceptor binding energies

被引:0
|
作者
机构
[1] Fischer, S.
[2] Wetzel, C.
[3] Haller, E.E.
来源
Fischer, S. | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 67期
关键词
Semiconducting gallium compounds;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] ON P-TYPE DOPING IN GAN-ACCEPTOR BINDING-ENERGIES
    FISCHER, S
    WETZEL, C
    HALLER, EE
    MEYER, BK
    APPLIED PHYSICS LETTERS, 1995, 67 (09) : 1298 - 1300
  • [2] Passivation of the beryllium acceptor in GaN and a possible route for p-type doping
    Demchenko, Denis O.
    Reshchikov, Michael A.
    APPLIED PHYSICS LETTERS, 2021, 118 (14)
  • [3] P-type doping in GaN through be implantation
    Feng, ZC
    Sun, YJ
    Tan, LS
    Chua, SJ
    Yu, JW
    Yang, CC
    Lu, W
    Collins, WE
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07): : 2415 - 2419
  • [4] p-type doping of cubic GaN by carbon
    As, DJ
    Köhler, U
    Lübbers, M
    Mimkes, J
    Lischka, K
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (02): : 699 - 703
  • [5] The doping process of p-type GaN films
    Chi, GC
    Kuo, CH
    Sheu, JK
    Pan, CJ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3): : 210 - 213
  • [6] Acceptor binding energies in GaN and AlN
    Mireles, F
    Ulloa, SE
    NITRIDE SEMICONDUCTORS, 1998, 482 : 839 - 844
  • [7] Acceptor binding energies in GaN and AlN
    Mireles, F
    Ulloa, SE
    PHYSICAL REVIEW B, 1998, 58 (07): : 3879 - 3887
  • [8] P-type doping of GaN by Mg+ implantation
    Yao, SD
    Zhou, SQ
    Yang, ZJ
    Lu, YH
    Sun, CC
    Sun, C
    Zhang, GY
    Vantomme, A
    Pipeleers, B
    Zhao, Q
    CHINESE PHYSICS LETTERS, 2003, 20 (01): : 102 - 104
  • [9] n- and p-type doping of cubic GaN
    As, DJ
    DEFECTS AND DIFFUSION IN CERAMICS: AN ANNUAL RETROSPECTIVE IV, 2002, 206-2 : 87 - 102
  • [10] Hydrogen depassivation of the magnesium acceptor by beryllium in p-type GaN
    Wang, Chihsiang
    Wang, Xiao
    Zhang, Qiming
    PHYSICS LETTERS A, 2010, 374 (23) : 2374 - 2378