The doping process of p-type GaN films

被引：14

作者：

Chi, GC ^{[1
]}

Kuo, CH ^{[1
]}

Sheu, JK ^{[1
]}

Pan, CJ ^{[1
]}

机构：

[1] Natl Cent Univ, Ctr Opt Sci, Chungli 32054, Taiwan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 75卷 / 2-3期

关键词：

p-type GaN film; p-type doping;

D O I：

10.1016/S0921-5107(00)00365-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of p-type GaN him is a key technology in developing optoelectronic devices. P-type doping (concentration similar to 10(17) cm(-3)) has been achieved in grown GaN by metalorganic chemical vapor deposition (MOCVD) with Mg (CP2Mg) doping. The Hall measurement results indicate that Mg diffused GaN films also have p-type conductivity with carrier concentration about 10(17) cm(-3) and a mobility of 10 cm(2) V-1 s(-1). For the as-grown Mg-doped GaN, the room temperature photoluminescence (PL) spectra show a blue emission peak around 420-450 nm, and the spectral peak depends on the carrier concentrations. For Mg-diffused GaN, the PL spectra shows only a broad violet emission for samples diffused at 900-1100 degrees C. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：210 / 213

页数：4

共 50 条

[1] Doping process of p-type GaN nanowires: A first principle study
Xia, Sihao
Liu, Lei
Diao, Yu
Feng, Shu
[J]. JOURNAL OF APPLIED PHYSICS, 2017, 122 (13)
[2] P-type doping in GaN through be implantation
Feng, ZC
Sun, YJ
Tan, LS
Chua, SJ
Yu, JW
Yang, CC
Lu, W
Collins, WE
[J]. PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07): : 2415 - 2419
[3] p-type doping of cubic GaN by carbon
As, DJ
Köhler, U
Lübbers, M
Mimkes, J
Lischka, K
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (02): : 699 - 703
[4] P-type doping of GaN by Mg+ implantation
Yao, SD
Zhou, SQ
Yang, ZJ
Lu, YH
Sun, CC
Sun, C
Zhang, GY
Vantomme, A
Pipeleers, B
Zhao, Q
[J]. CHINESE PHYSICS LETTERS, 2003, 20 (01) : 102 - 104
[5] n- and p-type doping of cubic GaN
As, DJ
[J]. DEFECTS AND DIFFUSION IN CERAMICS: AN ANNUAL RETROSPECTIVE IV, 2002, 206-2 : 87 - 102
[6] Wide range doping controllability of p-type GaN films prepared via pulsed sputtering
Fudetani, Taiga
Ueno, Kohei
Kobayashi, Atsushi
Fujioka, Hiroshi
[J]. APPLIED PHYSICS LETTERS, 2019, 114 (03)
[7] Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy
Bhattacharyya, A
Li, W
Cabalu, J
Moustakas, TD
Smith, DJ
Hervig, RL
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (21) : 4956 - 4958
[8] Cubic AlGaN/GaN and GaN/InGaN heterostructures:: effects of p-type doping
Rodrigues, SCP
Sipahi, GM
Scolfaro, LMR
Leite, JR
[J]. PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 74 - 77
[9] p-type co-doping study of GaN by photoluminescence
Zhang, JP
Sun, DZ
Wang, XL
Kong, MY
Zeng, YP
Li, JM
Lin, LY
[J]. JOURNAL OF CRYSTAL GROWTH, 1999, 197 (1-2) : 368 - 371
[10] GAN CORE RELAXATION EFFECTS AND THEIR RAMIFICATIONS FOR P-TYPE DOPING
STRITE, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (5B): : L699 - L701

← 1 2 3 4 5 →