On p-type doping in GaN - acceptor binding energies

被引:0
|
作者
机构
[1] Fischer, S.
[2] Wetzel, C.
[3] Haller, E.E.
来源
Fischer, S. | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 67期
关键词
Semiconducting gallium compounds;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Interrupted Mg doping of GaN with MOCVD for improved p-type layers
    Xing, Yanhui
    Han, Jun
    Liu, Jianping
    Niu, Nanhui
    Deng, Jun
    Litong
    Shen, Guangdi
    VACUUM, 2007, 82 (01) : 1 - 4
  • [32] Doping process of p-type GaN nanowires: A first principle study
    Xia, Sihao
    Liu, Lei
    Diao, Yu
    Feng, Shu
    JOURNAL OF APPLIED PHYSICS, 2017, 122 (13)
  • [33] p-type doping of CdTe
    Valdna, V
    SOLID STATE PHENOMENA, 1999, 67-8 : 309 - 314
  • [34] Growth of p-type GaN – The role of oxygen in activation of Mg-doping
    Kumar A.
    Berg M.
    Wang Q.
    Salter M.
    Ramvall P.
    Power Electronic Devices and Components, 2023, 5
  • [35] In Co-Doping Effect on the Optical Properties of P-Type GaN Epilayers
    An, Myung Hwan
    Chung, Ho-Yong
    Chung, Sang-Jo
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2008, 18 (08): : 450 - 453
  • [36] The feasibility of tunable p-type Mg doping in a GaN monolayer nano sheet
    Xia, Congxin
    Peng, Yuting
    Wei, Shuyi
    Jia, Yu
    ACTA MATERIALIA, 2013, 61 (20) : 7720 - 7725
  • [37] Effects of the sequential implantation of Mg and N ions into GaN for p-type doping
    Sakurai, Hideki
    Narita, Tetsuo
    Kataoka, Keita
    Hirukawa, Kazufumi
    Sumida, Kensuke
    Yamada, Shinji
    Sierakowski, Kacper
    Horita, Masahiro
    Ikarashi, Nobuyuki
    Bockowski, Michal
    Suda, Jun
    Kachi, Tetsu
    APPLIED PHYSICS EXPRESS, 2021, 14 (11)
  • [38] Influence of the p-type doping concentration on reflection-mode GaN photocathode
    Wang, Xiaohui
    Chang, Benkang
    Ren, Ling
    Gao, Pin
    APPLIED PHYSICS LETTERS, 2011, 98 (08)
  • [39] Co-doping characteristics of Si and Zn with Mg in P-type GaN
    Kim, KS
    Oh, CS
    Han, MS
    Kim, CS
    Yang, GM
    Yang, JW
    Hong, CH
    Youn, CJ
    Lim, KY
    Lee, HJ
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5
  • [40] Effect of p-type activation ambient on acceptor levels in Mg-doped GaN
    Nakano, Y
    Fujishima, O
    Kachi, T
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) : 415 - 419