Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer

被引：2

作者：

Vikhrova, O. V. ^{[1
]}

Danilov, Yu. A. ^{[1
]}

Zvonkov, B. N. ^{[1
]}

Demina, P. B. ^{[1
]}

Dorokhin, M. V. ^{[1
]}

Kalentyeva, I. L. ^{[1
]}

Kudrin, A. V. ^{[1
]}

机构：

[1] Lobachevsky State Univ, Res Inst Phys & Technol, Nizhnii Novgorod 603950, Russia

来源：

PHYSICS OF THE SOLID STATE | 2017年 / 59卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

MOLECULAR-BEAM EPITAXY; EMISSION PROPERTIES; THIN-FILMS; GAAS; GROWTH; PHOTOLUMINESCENCE; GAASSB/GAAS; LASERS; MOVPE;

D O I：

10.1134/S1063783417110336

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The radiative and magnetic properties of novel heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer are studied. The circular polarization of electroluminescent radiation is observed at temperatures from 10 to 160 K. The magnetic field dependences of the degree of circular polarization are nonlinear with a hysteresis loop at temperatures from 10 to 50 K, and they become linear at higher temperatures. The magnitude of polarization at the saturation magnetization of GaMnAs in the 2000 Oe field remains at the level of similar to 0.2%.

引用

页码：2216 / 2219

页数：4

共 50 条

[1] Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer
O. V. Vikhrova
Yu. A. Danilov
B. N. Zvonkov
P. B. Demina
M. V. Dorokhin
I. L. Kalentyeva
A. V. Kudrin
Physics of the Solid State, 2017, 59 : 2216 - 2219
[2] Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well
B. N. Zvonkov
S. M. Nekorkin
O. V. Vikhrova
N. V. Dikareva
Semiconductors, 2013, 47 : 1219 - 1223
[3] Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well
Zvonkov, B. N.
Nekorkin, S. M.
Vikhrova, O. V.
Dikareva, N. V.
SEMICONDUCTORS, 2013, 47 (09) : 1219 - 1223
[4] The Effect of Ferromagnetic Mn-Delta-Doped Layer on the Emission Properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs Heterostructures
Vikhrova, O. V.
Dorokhin, M. V.
Demina, P. B.
Zvonkov, B. N.
Zdoroveishchev, A. V.
Danilov, Yu. A.
Kalentyeva, I. L.
TECHNICAL PHYSICS LETTERS, 2014, 40 (10) : 930 - 933
[5] Magnetooptics of heterostructures with InGaAs/GaAs quantum well and a ferromagnetic Mn delta-layer
Zaitsev, S.V.
Fizika Nizkikh Temperatur, 2012, 38 (05): : 513 - 530
[6] The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures
O. V. Vikhrova
M. V. Dorokhin
P. B. Demina
B. N. Zvonkov
A. V. Zdoroveishchev
Yu. A. Danilov
I. L. Kalentyeva
Technical Physics Letters, 2014, 40 : 930 - 933
[7] Spin-Polarized Light-Emitting Diodes Based on Heterostructures with a GaAs/InGaAs/GaAs Quantum Well and Ferromagnetic GaMnSb Injection Layer
Dorokhin, M. V.
Malysheva, E. I.
Zdoroveishchev, A. V.
Danilov, Yu. A.
TECHNICAL PHYSICS LETTERS, 2012, 38 (08) : 764 - 767
[8] Spin-polarized light-emitting diodes based on heterostructures with a GaAs/InGaAs/GaAs quantum well and ferromagnetic GaMnSb injection layer
M. V. Dorokhin
E. I. Malysheva
A. V. Zdoroveishchev
Yu. A. Danilov
Technical Physics Letters, 2012, 38 : 764 - 767
[9] Magneto-optics of heterostructures with an InGaAs/GaAs quantum well and a ferromagnetic delta-layer of Mn
Zaitsev, S. V.
LOW TEMPERATURE PHYSICS, 2012, 38 (05) : 399 - 412
[10] GaAs:Mn layer magnetization in GaAs-based heterostructures containing InGaAs quantum well
Dmitriev, A. I.
Koplak, O. V.
Morgunov, R. B.
MAGNETISM AND MAGNETIC MATERIALS V, 2012, 190 : 550 - +

← 1 2 3 4 5 →