Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers

被引：5

作者：

Kamata, I. ^{[1
]}

Nagano, M. ^{[1
]}

Tsuchida, H. ^{[1
]}

机构：

[1] CRIEPI, Kanagawa 2400196, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

Topography; TED; BPD; Burgers vector; KOH etch pit; EPITAXIAL-GROWTH;

D O I：

10.4028/www.scientific.net/MSF.645-648.303

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Burgers vector directions of threading edge dislocations (TEDs) in 4H-SiC epitaxial layer are distinguished by grazing incidence high resolution topography. Based on comparison between appearance of KOH etch pits and direction of TED Burgers vector, the size difference of the TED etch pits is found to be dependent on their Burgers vector directions. Examining TEDs in the epilayer by topography, the Burgers vector direction of basal plane dislocations (BPDs) in the substrate is identified. Correspondence between the topography contrast and the sense of a BPD is also investigated.

引用

页码：303 / 306

页数：4

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