Conversion of basal plane dislocations to threading edge dislocations in growth of epitaxial layers on 4H-SiC substrates with a vicinal off-angle

被引：3

作者：

Masumoto, Keiko ^{[1
,2
]}

Ito, Sachiko ^{[1
,2
]}

Goto, Hideto ^{[2
]}

Yamaguchi, Hirotaka ^{[2
]}

Tamura, Kentaro ^{[1
,3
]}

Kudou, Chiaki ^{[1
,4
]}

Nishio, Johji ^{[1
,5
]}

Kojima, Kazutoshi ^{[1
,2
]}

Ohno, Toshiyuki ^{[1
,6
]}

Okumura, Hajime ^{[1
,2
]}

机构：

[1] R&D Partnership Future Power Elect Technol, 16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan

[2] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[3] ROHM Co Ltd, Kyoto 6158585, Japan

[4] Panasonic Corp, Okayama 7058585, Japan

[5] Toshiba Co Ltd, Kawasaki, Kanagawa 2128582, Japan

[6] Hitachi Ltd, Tokyo 1858601, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

4H-SiC; epitaxial layer; vicinal; off-angle; KOH etching; basal plane dislocation; FACE; SI;

D O I：

10.4028/www.scientific.net/MSF.778-780.99

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated a conversion of basal plane dislocation (BPD) to threading edge dislocation (TED) in growth of epitaxial layers (epi-layers) on 4H-SiC vicinal substrates with an off-angle of 0.85 degrees at low C/Si ratio of 0.7 by using deep KOH etching and X-ray topography observations. Deep KOH etching indicated that BPDs in the substrates converted to TEDs in the epi-layers. X-ray topography observations suggested that the conversion occurred during epitaxial growth when the thickness of epi-layers was less than 1.5 mu m. We found that the conversion ratio obtained from counting deep KOH etch pits was over 99%.

引用

页码：99 / +

页数：2

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