Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers

被引：5
|
作者：
Kamata, I. [1 ]
Nagano, M. [1 ]
Tsuchida, H. [1 ]
机构：
[1] CRIEPI, Kanagawa 2400196, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷
关键词：
Topography; TED; BPD; Burgers vector; KOH etch pit; EPITAXIAL-GROWTH;
D O I：
10.4028/www.scientific.net/MSF.645-648.303
中图分类号：
TB33 [复合材料];
学科分类号：
摘要：
Burgers vector directions of threading edge dislocations (TEDs) in 4H-SiC epitaxial layer are distinguished by grazing incidence high resolution topography. Based on comparison between appearance of KOH etch pits and direction of TED Burgers vector, the size difference of the TED etch pits is found to be dependent on their Burgers vector directions. Examining TEDs in the epilayer by topography, the Burgers vector direction of basal plane dislocations (BPDs) in the substrate is identified. Correspondence between the topography contrast and the sense of a BPD is also investigated.
引用
收藏
页码：303 / 306
页数：4
相关论文
共 50 条
  • [41] High-resolution X-ray topography of dislocations in 4H-SiC epilayers
    Kamata, Isaho
    Tsuchida, Hidekazu
    Vetter, William M.
    Dudley, Michael
    Silicon Carbide 2006 - Materials, Processing and Devices, 2006, 911 : 175 - 180
  • [42] High-resolution x-ray topography of dislocations in 4H-SiC epilayers
    Kamata, Isaho
    Tsuchida, Hidekazu
    Vetter, William M.
    Dudley, Michael
    JOURNAL OF MATERIALS RESEARCH, 2007, 22 (04) : 845 - 849
  • [43] Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers
    Maximenko, S. I.
    Freitas, J. A., Jr.
    Myers-Ward, R. L.
    Lew, K. -K.
    VanMil, B. L.
    Eddy, C. R., Jr.
    Gaskill, D. K.
    Muzykov, P. G.
    Sudarshan, T. S.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (01)
  • [44] Deflection of threading dislocations in patterned 4H-SiC epitaxial growth
    Tsuchida, Hidekazu
    Takanashi, Ryosuke
    Kamata, Isaho
    Hoshino, Norihiro
    Makino, Emi
    Kojima, Jun
    JOURNAL OF CRYSTAL GROWTH, 2014, 402 : 260 - 266
  • [45] Threading dislocations in 4H-SiC observed by double-crystal X-ray topography
    Yamaguchi, Hirotaka
    Matsuhata, Hirofumi
    DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV, 2012, 725 : 7 - 10
  • [46] Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry
    Matsuhata, Hirofumi
    Yamaguchi, Hirotaka
    Ohno, Toshiyuki
    PHILOSOPHICAL MAGAZINE, 2012, 92 (36) : 4599 - 4617
  • [47] Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers
    Nagano, Masahiro
    Kamata, Isaho
    Tsuchida, Hidekazu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
  • [48] Bending of basal-plane dislocations in VPE grown 4H-SiC epitaxial layers
    Ha, S.
    Mieszkowski, P.
    Rowland, L.B.
    Skowronski, M.
    Materials Science Forum, 2002, 389-393 (01) : 231 - 234
  • [49] Bending of basal-plane dislocations in VPE grown 4H-SiC epitaxial layers
    Ha, S
    Mieszkowski, P
    Rowland, LB
    Skowronski, M
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 231 - 234
  • [50] Migration of dislocations in 4H-SiC epilayers during the ion implantation process
    Tsuchida, H.
    Kamata, I.
    Nagano, M.
    Storasta, L.
    Miyanagi, T.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 271 - +
12345