Investigation of converted p+ poly-Si gate formed by B18Hx+ cluster ion implantation

被引：0

作者：

Hwang, Sun-Hwan ^{[1
]}

Kim, D. S. ^{[1
]}

Joo, Y. H. ^{[1
]}

Oh, J. G. ^{[1
]}

Lee, J. K. ^{[1
]}

Jung, T. W. ^{[1
]}

Cho, H. J. ^{[1
]}

Sohn, Y. S. ^{[1
]}

Sheen, D. S. ^{[1
]}

Pyi, S. H.

Kim, Steve

Huh, T. H.

Krull, W. A. ^{[2
]}

Cho, H. T. ^{[2
]}

机构：

[1] Hynix Semicond Inc, San 136-1 Amiri, Ichon 467701, Kyoungki, South Korea

[2] SemEquip Inc, N Billerica 01862, MA USA

来源：

ION IMPLANTATION TECHNOLOGY | 2006年 / 866卷

关键词：

B18HX+; cluster boron; P+ poly;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conventional B+ or BF2+ implantation has a limitation in terms of throughput and energy contamination. Boron cluster implantation is one alternative to solve this problem. We have investigated the characteristics of B(18)H(X)(+)cluster ion implantation using p(+) poly-Si gated MOS capacitors. The B18HX+ cluster was implanted to n(+) poly-Si in order to convert to p(+) poly-Si with energy of 2.5keV and dose of 1.6E 16 similar to 2.0E 16 ions/cm(2). The improvement in the inversion capacitance (more then 3%) was observed in the case of cluster ion implantation. This result indicates less poly-silicon depletion effect. It was verified by TDS and SIMS that the hydrogen level of the by p(+) poly-Si gate implanted by the cluster ions, and then annealed, was similar to that of a sample implanted by conventional B+ ions. Thus, boron cluster implantation was proven to be more beneficial than the conventional B+ implantation for the capacitor performance.

引用

页码：163 / +

页数：2

共 35 条

[21] FURTHER INVESTIGATION OF ELECTRON TRAPS INDUCED BY B + AND P + AND ION IMPLANTATION IN n-Si.
Sun Jinglan
Chen Jianxin
Li Mingfu
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1987, 8 (05): : 545 - 547
[22] P-type gate electrode formation using B18H22 ion implantation
Henke, Dietmar
Jakubowski, Frank
Deichler, Josef
Venezia, Vincent C.
Ameen, M. S.
Harris, M. A.
ION IMPLANTATION TECHNOLOGY, 2006, 866 : 202 - +
[23] Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs
Hsieh, Dong-Ru
Lin, Kun-Cheng
Chao, Tien-Sheng
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[24] Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs
Hsieh, Dong-Ru
Lin, Kun-Cheng
Chao, Tien-Sheng
IEEE Journal of the Electron Devices Society, 2019, 7 : 268 - 275
[25] On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS technology
Yousif, MYA
Friesel, M
Willander, M
Lundgren, P
Caymax, M
SOLID-STATE ELECTRONICS, 2000, 44 (08) : 1425 - 1429
[26] Investigation of p-type junction-less independent double-gate poly-Si nano-strip transistors
Liu, Keng-Ming
Lin, Zer-Ming
Wu, Jiun-Peng
Lin, Horng-Chih
Huang, Tiao-Yuan
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (01)
[27] Effective work-function modulation by aluminum-ion implantation for metal-gate technology (poly-Si/TiN/SiO2)
Singanamalla, R.
Yu, H. Y.
Van Daele, B.
Kubicek, S.
De Meyer, K.
IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) : 1089 - 1091
[28] The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2:nc-Si system
Tetelbaum, DI
Gorshkov, ON
Burdov, VA
Trushin, SA
Mikhaylov, AN
Gaponova, DM
Morozov, SV
Kovalev, AI
PHYSICS OF THE SOLID STATE, 2004, 46 (01) : 17 - 21
[29] Electrical profiles of ultrashallow p+ layers formed in Si by low-energy BF2+ ion implantation -: art. no. 083708
Tamaki, Y
Ozaki, D
Inada, T
JOURNAL OF APPLIED PHYSICS, 2005, 97 (08)
[30] The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2: nc-Si system
D. I. Tetelbaum
O. N. Gorshkov
V. A. Burdov
S. A. Trushin
A. N. Mikhaylov
D. M. Gaponova
S. V. Morozov
A. I. Kovalev
Physics of the Solid State, 2004, 46 : 17 - 21

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