The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2:nc-Si system

The possible mechanisms of the influence of implanted impurities of Group III and V elements on the luminescence properties of a system consisting of silicon nanocrystals in SiO2 are considered and generalized. The effect of boron and nitrogen ion implantation on the photoluminescence intensity is investigated experimentally. The experimental results and previously reported data on the ion-implantation doping with phosphorus are discussed in terms of the mechanisms under consideration. The state of implanted phosphorus is determined using x-ray photoelectron spectroscopy. It is shown that the enhancement and degradation of the photoluminescence depend on the type of implanted impurities and the conditions of postimplantation heat treatment. (C) 2004 MAIK "Nauka / Interperiodica".