The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2:nc-Si system

被引：12
|
作者：
Tetelbaum, DI
Gorshkov, ON
Burdov, VA
Trushin, SA
Mikhaylov, AN
Gaponova, DM
Morozov, SV
Kovalev, AI
机构：
[1] Nizhni Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod 603950, Russia
[2] Russian Acad Sci, Inst Microstruct Phys, Nizhnii Novgorod 603950, Russia
[3] IP Bardin Cent Ferrous Met Res Inst, Moscow 107005, Russia
来源：
PHYSICS OF THE SOLID STATE | 2004年 / 46卷 / 01期
关键词：
D O I：
10.1134/1.1641912
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The possible mechanisms of the influence of implanted impurities of Group III and V elements on the luminescence properties of a system consisting of silicon nanocrystals in SiO2 are considered and generalized. The effect of boron and nitrogen ion implantation on the photoluminescence intensity is investigated experimentally. The experimental results and previously reported data on the ion-implantation doping with phosphorus are discussed in terms of the mechanisms under consideration. The state of implanted phosphorus is determined using x-ray photoelectron spectroscopy. It is shown that the enhancement and degradation of the photoluminescence depend on the type of implanted impurities and the conditions of postimplantation heat treatment. (C) 2004 MAIK "Nauka / Interperiodica".
引用
收藏
页码：17 / 21
页数：5
相关论文
共 50 条
  • [31] MICROSTRUCTURAL PROPERTIES OF NC-Si/SiO2 FILMS IN SITU GROWN BY REACTIVE MAGNETRON CO-SPUTTERING
    Lu, Wanbing
    Guo, Shaogang
    Wang, Jiantao
    Li, Yun
    Wang, Xinzhan
    Yu, Gengxi
    Fan, Shanshan
    Fu, Guangsheng
    INTERNATIONAL JOURNAL OF NANOSCIENCE, 2012, 11 (06)
  • [32] Si-ion implantation-induced luminescence from Si single crystals with a SiO2 overlayer
    Lan, AD
    Bai, XD
    Liu, BX
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 503 - 506
  • [33] n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation
    Park, CH
    Jeong, IS
    Bae, HS
    Kim, TG
    Im, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 216 : 127 - 130
  • [34] Optical properties of interacting Si nanoclusters in SiO2 fabricated by ion implantation and annealing
    Shimizu-Iwayama, T
    Hole, DE
    Townsend, PD
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 147 (1-4): : 350 - 355
  • [35] Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing
    Shimizu-Iwayama, T
    Hama, T
    Hole, DE
    Boyd, IW
    SOLID-STATE ELECTRONICS, 2001, 45 (08) : 1487 - 1494
  • [36] Optical and structural properties of encapsulated Si nanocrystals formed in SiO2 by ion implantation
    Iwayama, TS
    Hama, T
    Hole, DE
    Boyd, IW
    SURFACE & COATINGS TECHNOLOGY, 2002, 158 : 712 - 716
  • [37] Optical properties of interacting Si nanoclusters in SiO2 fabricated by ion implantation and annealing
    Shimizu-Iwayama, Tsutomu
    Hole, David E.
    Townsend, Peter D.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1999, 147 (1-4): : 350 - 355
  • [38] Visible luminescence induced by Si-ion implantation into Si single crystals covered with a thin SiO2 layer
    Lan, AD
    Liu, BX
    Bai, XD
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (8A): : L1019 - L1021
  • [39] Visible luminescence induced by Si-ion implantation into Si single crystals covered with a thin SiO2 layer
    Lan, Aidong
    Liu, Baixin
    Bai, Xinde
    Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (8 A):
  • [40] Optical and electrical properties of pure and rare-earth-doped nc-Si/SiO2 composites prepared by RF cosputtering
    Fonseca, LF
    Resto, O
    Nery, G
    Posada, Y
    Weisz, Z
    Liu, HM
    Mahfoud, A
    SURFACE REVIEW AND LETTERS, 2002, 9 (5-6) : 1655 - 1660
12345