The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2:nc-Si system

被引：12

作者：

Tetelbaum, DI

Gorshkov, ON

Burdov, VA

Trushin, SA

Mikhaylov, AN

Gaponova, DM

Morozov, SV

Kovalev, AI

机构：

[1] Nizhni Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod 603950, Russia

[2] Russian Acad Sci, Inst Microstruct Phys, Nizhnii Novgorod 603950, Russia

[3] IP Bardin Cent Ferrous Met Res Inst, Moscow 107005, Russia

来源：

PHYSICS OF THE SOLID STATE | 2004年 / 46卷 / 01期

关键词：

D O I：

10.1134/1.1641912

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The possible mechanisms of the influence of implanted impurities of Group III and V elements on the luminescence properties of a system consisting of silicon nanocrystals in SiO2 are considered and generalized. The effect of boron and nitrogen ion implantation on the photoluminescence intensity is investigated experimentally. The experimental results and previously reported data on the ion-implantation doping with phosphorus are discussed in terms of the mechanisms under consideration. The state of implanted phosphorus is determined using x-ray photoelectron spectroscopy. It is shown that the enhancement and degradation of the photoluminescence depend on the type of implanted impurities and the conditions of postimplantation heat treatment. (C) 2004 MAIK "Nauka / Interperiodica".

引用

页码：17 / 21

页数：5

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