Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films

被引：7
|
作者：
Chen, CY [1 ]
Chen, WD
Wang, YQ
Song, SF
Xu, ZJ
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Chinese Acad Sci, State Key Lab Surface Phys, Beijing 100080, Peoples R China
来源：
ACTA PHYSICA SINICA | 2003年 / 52卷 / 03期
关键词：
E3+; nc-Si; H treatment;
D O I：
10.7498/aps.52.736
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Con-elation between nc-Si, Er3+ and nonradiative defects in Er-doped nc-Si/SiO2 films is studied. Upon the 514.5 run laser excitation, the samples exhibit a nanocrystal-related spectrum centered at around 750 nm and an Er3+ luminescence line at 1.54mum. With increasing Er3+ content in the films,the Er3+ emission becomes intense while the photoluminescence at 750 nm decreases. Hydrogen passivation of the samples is shown to result in increases of the two luminescence peaks. However, the effect of hydrogen treatment is different for the samples annealed at different temperatures. The experimental results show that the coupling between Er3+, nc-Si and noradiative centers has a great influence on photoluminescence from nc-Si/SiO2 < Er > films.
引用
收藏
页码：736 / 739
页数：4
相关论文
共 13 条
  • [1] LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI
    ADLER, DL
    JACOBSON, DC
    EAGLESHAM, DJ
    MARCUS, MA
    BENTON, JL
    POATE, JM
    CITRIN, PH
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (18) : 2181 - 2183
  • [2] Density of states of Pb1 Si/SiO2 interface trap centers
    Campbell, JP
    Lenahan, PM
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (11) : 1945 - 1947
  • [3] Room-temperature luminescence from rare-earth ions implanted into Si nanocrystals
    Franzò, G
    Vinciguerra, V
    Priolo, F
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 2000, 80 (04): : 719 - 728
  • [4] 1.54 mu m photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+
    Fujii, M
    Yoshida, M
    Kanzawa, Y
    Hayashi, S
    Yamamoto, K
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (09) : 1198 - 1200
  • [5] ROOM-TEMPERATURE LUMINESCENCE FROM ER-IMPLANTED SEMIINSULATING POLYCRYSTALLINE SILICON
    LOMBARDO, S
    CAMPISANO, SU
    VANDENHOVEN, GN
    CACCIATO, A
    POLMAN, A
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (14) : 1942 - 1944
  • [6] OPTICAL DOPING OF WAVE-GUIDE MATERIALS BY MEV ER IMPLANTATION
    POLMAN, A
    JACOBSON, DC
    EAGLESHAM, DJ
    KISTLER, RC
    POATE, JM
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) : 3778 - 3784
  • [7] Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals
    Priolo, F
    Franzò, G
    Pacifici, D
    Vinciguerra, V
    Iacona, F
    Irrera, A
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) : 264 - 272
  • [8] Excitation and nonradiative deexcitation processes of Er3+ in crystalline Si
    Priolo, F
    Franzo, G
    Coffa, S
    Carnera, A
    [J]. PHYSICAL REVIEW B, 1998, 57 (08): : 4443 - 4455
  • [9] Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures
    Qin, GG
    Wang, YQ
    Qiao, YP
    Zhang, BR
    Ma, ZC
    Zong, WH
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (15) : 2182 - 2184
  • [10] TAKAHEI K, 1992, MATER SCI FORUM, V83, P641, DOI 10.4028/www.scientific.net/MSF.83-87.641
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