Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

被引：0
|
作者：
Hsieh, Dong-Ru [1 ]
Lin, Kun-Cheng [1 ]
Chao, Tien-Sheng [1 ]
机构：
[1] Department of Electrophysics, National Chiao Tung University, Hsinchu,30010, Taiwan
来源：
IEEE Journal of the Electron Devices Society | 2019年 / 7卷
关键词：
Compendex;
D O I：
8630465
中图分类号：
学科分类号：
摘要：
Timing circuits
引用
收藏
页码：268 / 275
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