Investigation of converted p+ poly-Si gate formed by B18Hx+ cluster ion implantation

被引：0

作者：

Hwang, Sun-Hwan ^{[1
]}

Kim, D. S. ^{[1
]}

Joo, Y. H. ^{[1
]}

Oh, J. G. ^{[1
]}

Lee, J. K. ^{[1
]}

Jung, T. W. ^{[1
]}

Cho, H. J. ^{[1
]}

Sohn, Y. S. ^{[1
]}

Sheen, D. S. ^{[1
]}

Pyi, S. H.

Kim, Steve

Huh, T. H.

Krull, W. A. ^{[2
]}

Cho, H. T. ^{[2
]}

机构：

[1] Hynix Semicond Inc, San 136-1 Amiri, Ichon 467701, Kyoungki, South Korea

[2] SemEquip Inc, N Billerica 01862, MA USA

来源：

ION IMPLANTATION TECHNOLOGY | 2006年 / 866卷

关键词：

B18HX+; cluster boron; P+ poly;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conventional B+ or BF2+ implantation has a limitation in terms of throughput and energy contamination. Boron cluster implantation is one alternative to solve this problem. We have investigated the characteristics of B(18)H(X)(+)cluster ion implantation using p(+) poly-Si gated MOS capacitors. The B18HX+ cluster was implanted to n(+) poly-Si in order to convert to p(+) poly-Si with energy of 2.5keV and dose of 1.6E 16 similar to 2.0E 16 ions/cm(2). The improvement in the inversion capacitance (more then 3%) was observed in the case of cluster ion implantation. This result indicates less poly-silicon depletion effect. It was verified by TDS and SIMS that the hydrogen level of the by p(+) poly-Si gate implanted by the cluster ions, and then annealed, was similar to that of a sample implanted by conventional B+ ions. Thus, boron cluster implantation was proven to be more beneficial than the conventional B+ implantation for the capacitor performance.

引用

页码：163 / +

页数：2

共 35 条

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