Peculiarities of conductivity in structures delta-doped by Si on vicinal (111)A GaAs substrate

被引：0
|
作者：
Kulbachinskii, VA
Galiev, GB
Mokerov, VG
Lunin, RA
Rogozin, VA
Derkach, AV
Vasil'evskii, IS
机构：
[1] Moscow MV Lomonosov State Univ, Fac Phys, Low Temp Phys Dept, Moscow, Russia
[2] Russian Acad Sci, Inst Radioengn & Elect, Moscow, Russia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
(111)A GaAs surface; anisotropy of conductivity; quantum wires;
D O I：
10.1016/S1386-9477(02)00738-5
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Novel epitaxial structures delta-doped by Si, grown by a MBE method on a vicinal (1 1 1)A substrate misoriented by 0.5degrees, 1.5degrees and 3degrees from the (1 1 1)A GaAs plane towards the [2 (1) over bar (1) over bar] direction were formed. In this way it is possible to obtain 1D channels, or at least, ID periodic modulation of the 2D structure. All samples showed p-type conductivity. It was found that the resistivity of structures R-pa along the steps of vicinal surface is lower than that of R-pe across the steps and depends on temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：172 / 173
页数：2
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