THE NEGATIVE DIFFERENTIAL RESISTANCE BEHAVIOR OF GAAS DELTA-DOPED STRUCTURES

被引：2
|
作者：
HOUNG, MP
WANG, YH
CHEN, HH
PAN, CC
机构：
[1] Department of Electrical Engineering, National Cheng Kung University, Tainan
来源：
SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 01期
关键词：
D O I：
10.1016/0038-1101(92)90306-W
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we analyzed the negative differential resistance (NDR) phenomenon of GaAs delta-doped structures by using the Airy function approach. Theoretical results indicate that the NDR behavior results from the resonant tunneling process in the delta-doped layer, which is further evidenced by the measured current-voltage characteristic of a Schottky-delta-n+-Schottky device. Our analysis method is useful for designing GaAs delta-doped devices.
引用
收藏
页码：67 / 71
页数：5
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