Peculiarities of conductivity in structures delta-doped by Si on vicinal (111)A GaAs substrate

Novel epitaxial structures delta-doped by Si, grown by a MBE method on a vicinal (1 1 1)A substrate misoriented by 0.5degrees, 1.5degrees and 3degrees from the (1 1 1)A GaAs plane towards the [2 (1) over bar (1) over bar] direction were formed. In this way it is possible to obtain 1D channels, or at least, ID periodic modulation of the 2D structure. All samples showed p-type conductivity. It was found that the resistivity of structures R-pa along the steps of vicinal surface is lower than that of R-pe across the steps and depends on temperature. (C) 2002 Elsevier Science B.V. All rights reserved.