Nanoelectromechanical Switch Devices Based on Graphene and Carbon Nanotube (CNT)

被引:1
|
作者
Zulkefli, Mohd Amir [1 ]
Mohamed, Mohd Ambri [1 ]
Slow, Kim S. [1 ]
YeopMajlis, Burhanuddin [1 ]
机构
[1] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect IMEN, Ukm Bangi 43600, Selangor Darul, Malaysia
来源
SAINS MALAYSIANA | 2018年 / 47卷 / 03期
关键词
Carbon-based material; carbon nanotube (CNT); graphene; nanoelectromechanical (NEM); NEM switch; NEMS; MEMORY; TRANSISTOR; CIRCUITS;
D O I
10.17576/jsm-2018-4703-24
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Nanoelectromechanical (NEM) switches are similar to the conventional semiconductor switches when used as a transistor and sensor, in spite of their fundamental differences in operating principles. This difference in operation allows NEM switches to perform better in harsh conditions while conventional semiconductor switch has the advantage of matured technology in fabrication. In this paper, we reviewed the recent progress and potential of NEM technology in switching applications based on carbon-based materials focusing on CNT and graphene. The progress in geometrical design like perforated beam structure, which can reduce its operation voltage, was also discussed. Based on Gartner Hype Cycle, the technology, process and product of NEM switch or hybrid NEM-CMOS switch was located at various stages such as the trough of disillusionment, slope enlightment and plateau of productivity, respectively. Then, the geometrical design of NEM switch based on these materials was reviewed from the recent literatures. We also identified the challenges involved in fabrication of CNT and graphene based NEM switch technology, such as, short channel effect, gate leakage and challenge in lithography process. Finally, we concluded this paper with a few perspectives, insights and opportunities in NEM switch technology.
引用
收藏
页码:619 / 633
页数:15
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