Investigation of Enhanced Impact Ionization in Uniaxially Strained Si n-Channel Metal Oxide Semiconductor Field Effect Transistor

被引：3
|
作者：
Adachi, Shinichiro [1 ]
Asano, Tanemasa [1 ]
机构：
[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Nishi Ku, Fukuoka 8190395, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期
基金：
日本学术振兴会;
关键词：
SUBSTRATE CURRENT; VOLTAGE;
D O I：
10.1143/JJAP.49.04DC14
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The impact ionization rate in uniaxially strained silicon is evaluated from viewpoints of the ionization threshold beta and maximum electric field E-m for the first time. Strain and temperature dependences of beta are investigated on the basis of the change in slope in a universal relation while E-m, which is also dependent on strain and temperature, is investigated on the basis of the change in saturation voltage V-DSAT. The impact ionization rate is a function of beta and E-m such that we also evaluated strain and temperature dependence of multiplication factor M - 1 (= I-sub/I-D) to determine the major concern of change in impact ionization rate. The result shows that the change in E-m due to the change in potential drop along the channel is the major concern in a uniaxially strained silicon n-channel metal oxide semiconductor field effect transistor (nMOSFET). (C) 2010 The Japan Society of Applied Physics
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页数：4
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