Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors

Random telegraph signal (RTS) amplitude has been studied in a submicron n-channel metal oxide semiconductor field effect transistor as a function of gate voltage. To do so, we have employed a complete simulator of metal oxide semiconductor devices where the effect of a single acceptor trap placed in the silicon oxide was taken into account. The dominant role played by the screening of the charged trap due to free channel carriers has been demonstrated. Furthermore, the effect of the mobility and carrier number fluctuations on the normalized drain current fluctuations were separated, revealing the importance of mobility variations on the RTS amplitude. (C) 1997 American Institute of Physics.