The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors

被引：0
|
作者：
Wang, MF [1 ]
Chien, CH
Chao, TS
Lin, HC
Jong, FC
Huang, TY
Chang, CY
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[3] Natl Nano Device Labs, Hsinchu 300, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 1AB期
关键词：
germanium halo implant; large-angle-tilt implant; short-channel effects; drain-induced barrier lowering; threshold-voltage lowering;
D O I：
10.1143/JJAP.38.L33
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, we report the use of shallow germanium halo doping on improving the short-channel effects of deep submicron n-channel metal-oxide-semiconductor field effect transistors. It is demonstrated that by adding a shallow (i.e., 10 keV) germanium large-angle-tilt implant (LATID), V-th lowering in short-channel transistors is significantly improved. The improvement is found to increase with increasing germanium dose. A low germanium dose (e.g., 5 x 10(12) cm(-2)) is also found to effectively improve the drain-induced barrier lowering (DIBL) of the short-channel transistors. Our results also show that junction leakage degradation, which has been previously reported to accompany germanium implants using higher energy, can be minimized by the shallow low-dose implant used in this study.
引用
收藏
页码：L33 / L34
页数：2
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