Low-voltage high-gain 0.2 μm n-channel metal oxide semiconductor field effect transistors by channel counter doping with arsenic

被引：0
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作者：
Nagai, Ryo [1 ]
Umeda, Kazunori [1 ]
Takeda, Eiji [1 ]
机构：
[1] Hitachi Ltd, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 1 B期
关键词：
MOSFET devices;
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摘要：
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页码：434 / 437
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