Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors

被引：18

作者：

Prati, Enrico ^{[1
]}

Fanciulli, Marco ^{[1
]}

Ferrari, Giorgio ^{[2
]}

Sampietro, Marco ^{[2
]}

机构：

[1] Ist Nazl Fis Mat, Lab Nazl Mat & Disposit Microelettron, I-20041 Agrate Brianza, Italy

[2] Politecn Milan, Dipartimento Elettron & Informat, I-20133 Milan, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 12期

关键词：

D O I：

10.1063/1.2939272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the current fluctuations of random telegraph signal experimentally observed at cryogenic temperatures in ordinary submicron Si/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs). A giant drain current fluctuation Delta I/I up to 55% is observed at sub-Kelvin temperature in samples with a large channel width. The current variation is compatible with predictions for decanano MOSFETs at room temperature. The similarity suggests the formation of a quasi-one-dimensional conduction channel at gate voltages sufficiently close to the threshold voltage. (C) 2008 American Institute of Physics.

引用

页数：3

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