Tunnel magnetoresistance in magnetic tunnel junctions with Co2Fe (Al, Si) full-Heusler films

被引：8
|
作者：
Tezuka, N.
Ikeda, N.
Miyazaki, A.
Okamura, S.
Kikuchi, M.
Sugimoto, S.
Inomata, K.
机构：
[1] Tohoku Univ, Dept Mat Sci, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
[2] CREST JST, Kawaguchi, Saitama 3320012, Japan
[3] Kojundo Chem Lab, Kawagoe, Saitama 3500284, Japan
[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 310卷 / 02期
关键词：
tunnel magnetoresistance; magnetic tunnel junction; full-Heusler; half metallic ferromagnet;
D O I：
10.1016/j.jmmm.2006.10.812
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The magnetoresistance effect for a magnetic tunnel junction ( MTJ) with Co2FeAl0.5Si0.5 electrodes on Cr buffered MgO ( 0 0 1) substrate has been investigated. The MTJ with B2- type Co2FeAl0.5Si0.5 electrode exhibited tunnel magnetoresistance ( TMR) ratio of 76% at room temperature ( RT) and 106% at 5K, while that with L2(1) structure showed 51% and 78% at RT and 5K, respectively. For both cases, the bias voltage dependence of TMR ratio is almost the same, but only for the MTJs with a Co2FeAl0.5Si0.5 electrode annealed at 600 degrees C shows a dip around similar to 200 mV. (c) 2006 Elsevier B. V. All rights reserved.
引用
收藏
页码：1940 / 1942
页数：3
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