Tunnel magnetoresistance in magnetic tunnel junctions with Co2Fe (Al, Si) full-Heusler films

被引：8

作者：

Tezuka, N.

Ikeda, N.

Miyazaki, A.

Okamura, S.

Kikuchi, M.

Sugimoto, S.

Inomata, K.

机构：

[1] Tohoku Univ, Dept Mat Sci, Grad Sch Engn, Sendai, Miyagi 9808579, Japan

[2] CREST JST, Kawaguchi, Saitama 3320012, Japan

[3] Kojundo Chem Lab, Kawagoe, Saitama 3500284, Japan

[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 310卷 / 02期

关键词：

tunnel magnetoresistance; magnetic tunnel junction; full-Heusler; half metallic ferromagnet;

D O I：

10.1016/j.jmmm.2006.10.812

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The magnetoresistance effect for a magnetic tunnel junction ( MTJ) with Co2FeAl0.5Si0.5 electrodes on Cr buffered MgO ( 0 0 1) substrate has been investigated. The MTJ with B2- type Co2FeAl0.5Si0.5 electrode exhibited tunnel magnetoresistance ( TMR) ratio of 76% at room temperature ( RT) and 106% at 5K, while that with L2(1) structure showed 51% and 78% at RT and 5K, respectively. For both cases, the bias voltage dependence of TMR ratio is almost the same, but only for the MTJs with a Co2FeAl0.5Si0.5 electrode annealed at 600 degrees C shows a dip around similar to 200 mV. (c) 2006 Elsevier B. V. All rights reserved.

引用

页码：1940 / 1942

页数：3

共 50 条

[21] Fabrication of fully epitaxial magnetic tunnel junctions using cobalt-based full-Heusler alloy thin film and their tunnel magnetoresistance characteristics
Yamamoto, M
Marukame, T
Ishikawa, T
Matsuda, K
Uemura, T
Arita, M
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (05) : 824 - 833
[22] Preparation of Co2FeSn Heusler alloy films and magnetoresistance of Fe/MgO/Co2FeSn magnetic tunnel junctions
Tanaka, M. A.
Ishikawa, Y.
Wada, Y.
Hori, S.
Murata, A.
Horii, S.
Yamanishi, Y.
Mibu, K.
Kondou, K.
Ono, T.
Kasai, S.
JOURNAL OF APPLIED PHYSICS, 2012, 111 (05)
[23] Magnetoresistance Effect of Magnetic Tunnel Junction with Co2Ti0.5Mn0.5Al Full-Heusler Alloy Thin Film
Sasaki, Akihiro
Tezuka, Nobuki
Sugimoto, Satoshi
Okubo, Akinari
Umetsu, Rie
Kainuma, Ryosuke
JOURNAL OF THE JAPAN INSTITUTE OF METALS, 2009, 73 (09) : 670 - 673
[24] Tunnel magnetoresistance for junctions with epitaxial full-Heusler Co2FeAl0.5Si0.5 electrodes with B2 and L21 structures
Tezuka, N.
Ikeda, N.
Miyazaki, A.
Sugimoto, S.
Kikuchi, M.
Inomata, K.
APPLIED PHYSICS LETTERS, 2006, 89 (11)
[25] Tunnel magnetoresistance effect in magnetic tunnel junctions using epitaxial Co2 FeSi Heusler alloy electrode
Oogane, Mikihiko
Shinano, Masatsugu
Sakuraba, Yuya
Ando, Yasuo
Journal of Applied Physics, 2009, 105 (07):
[26] Tunnel magnetoresistance effect in magnetic tunnel junctions using epitaxial Co2FeSi Heusler alloy electrode
Oogane, Mikihiko
Shinano, Masatsugu
Sakuraba, Yuya
Ando, Yasuo
JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
[27] The influence of oxygen on structure and magnetic properties of full Heusler Co2MnAl films and magnetic tunnel junctions
Qiu, J. J.
Ko, V.
Luo, P.
Yeo, W. K.
An, L. H.
Zong, B. Y.
Han, G. C.
JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
[28] The influence of oxygen on structure and magnetic properties of full Heusler Co2 MnAl films and magnetic tunnel junctions
Qiu, J.J.
Ko, V.
Luo, P.
Yeo, W.K.
An, L.H.
Zong, B.Y.
Han, G.C.
Journal of Applied Physics, 2009, 105 (07):
[29] Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2FeAl0.5Si0.5 electrodes fabricated by molecular beam epitaxy
Tezuka, N.
Ikeda, N.
Mitsuhashi, F.
Sugimoto, S.
APPLIED PHYSICS LETTERS, 2009, 94 (16)
[30] Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co2 MnGe and a MgO tunnel barrier
Hakamata, Shinya
Ishikawa, Takayuki
Marukame, Takao
Matsuda, Ken-Ichi
Uemura, Tetsuya
Arita, Masashi
Yamamoto, Masafumi
Journal of Applied Physics, 2007, 101 (09):

← 1 2 3 4 5 →