Tunnel magnetoresistance in magnetic tunnel junctions with Co2Fe (Al, Si) full-Heusler films

被引：8
|
作者：
Tezuka, N.
Ikeda, N.
Miyazaki, A.
Okamura, S.
Kikuchi, M.
Sugimoto, S.
Inomata, K.
机构：
[1] Tohoku Univ, Dept Mat Sci, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
[2] CREST JST, Kawaguchi, Saitama 3320012, Japan
[3] Kojundo Chem Lab, Kawagoe, Saitama 3500284, Japan
[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 310卷 / 02期
关键词：
tunnel magnetoresistance; magnetic tunnel junction; full-Heusler; half metallic ferromagnet;
D O I：
10.1016/j.jmmm.2006.10.812
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The magnetoresistance effect for a magnetic tunnel junction ( MTJ) with Co2FeAl0.5Si0.5 electrodes on Cr buffered MgO ( 0 0 1) substrate has been investigated. The MTJ with B2- type Co2FeAl0.5Si0.5 electrode exhibited tunnel magnetoresistance ( TMR) ratio of 76% at room temperature ( RT) and 106% at 5K, while that with L2(1) structure showed 51% and 78% at RT and 5K, respectively. For both cases, the bias voltage dependence of TMR ratio is almost the same, but only for the MTJs with a Co2FeAl0.5Si0.5 electrode annealed at 600 degrees C shows a dip around similar to 200 mV. (c) 2006 Elsevier B. V. All rights reserved.
引用
收藏
页码：1940 / 1942
页数：3
相关论文
共 50 条
  • [31] Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co2MnGe and a MgO tunnel barrier
    Hakamata, Shinya
    Ishikawa, Takayuki
    Marukame, Takao
    Matsuda, Ken-ichi
    Uemura, Tetsuya
    Arita, Masashi
    Yamamoto, Masafumi
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (09)
  • [32] Highly spin-polarized tunneling in fully epitaxial magnetic tunnel junctions using full-Heusler alloy Co2Cr0.6Fe0.4Al thin film and MgO tunnel barrier
    Marukame, T.
    Ishikawa, T.
    Sekine, W.
    Matsuda, K.
    Uemura, T.
    Yamamoto, M.
    IEEE TRANSACTIONS ON MAGNETICS, 2006, 42 (10) : 2652 - 2654
  • [33] Magnetoresistance effect of tunnel junctions using Co2(Ti, Mn)Z (Z = Al, Si) Heusler alloys
    Sasaki, A.
    Tezuka, N.
    Jiang, L.
    Sugimoto, S.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)
  • [34] Large tunnel magnetoresistance in magnetic tunnel junctions using a Co2MnSi Heusler alloy electrode and a MgO barrier
    Tsunegi, Sumito
    Sakuraba, Yuya
    Oogane, Mikihiko
    Takanashi, Koki
    Ando, Yasuo
    APPLIED PHYSICS LETTERS, 2008, 93 (11)
  • [35] Influence of film composition in quaternary Heusler alloy Co2(Mn,Fe)Si thin films on tunnelling magnetoresistance of Co2(Mn,Fe)Si/MgO-based magnetic tunnel junctions
    Liu, Hong-xi
    Kawami, Takeshi
    Moges, Kidist
    Uemura, Tetsuya
    Yamamoto, Masafumi
    Shi, Fengyuan
    Voyles, Paul M.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (16)
  • [36] Enhanced tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) magnetic tunnel junctions
    Scheike, Thomas
    Wen, Zhenchao
    Sukegawa, Hiroaki
    Mitani, Seiji
    APPLIED PHYSICS LETTERS, 2022, 120 (03)
  • [37] Tunnel magnetoresistance effect in magnetic tunnel junctions with epitaxial Co2FeAl0.5Si0.5 Heusler electrodes on MgO (110) single substrates
    Tezuka, N.
    Mitsuhashi, F.
    Sugimoto, S.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (07)
  • [38] Tunnel magnetoresistance effect and interface study in magnetic tunnel junctions using epitaxial Fe2CrSi Heusler alloy electrode
    Wang, Yu-Pu
    Han, Gu-Chang
    Lu, Hui
    Qiu, Jinjun
    Yap, Qi-Jia
    Ji, Rong
    Teo, Kie-Leong
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (01)
  • [39] Tunnel Magnetoresistance and Spin-Transfer-Torque Switching in Polycrystalline Co2FeAl Full-Heusler-Alloy Magnetic Tunnel Junctions on Amorphous Si/SiO2 Substrates
    Wen, Zhenchao
    Sukegawa, Hiroaki
    Kasai, Shinya
    Inomata, Koichiro
    Mitani, Seiji
    PHYSICAL REVIEW APPLIED, 2014, 2 (02):
  • [40] Spin polarization of Co2FeSi full-Heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions
    Gercsi, Z.
    Rajanikanth, A.
    Takahashi, Y. K.
    Hono, K.
    Kikuchi, M.
    Tezuka, N.
    Inomata, K.
    APPLIED PHYSICS LETTERS, 2006, 89 (08)
12345