SAR ADC;
CMOS;
Comparator;
Non-binary DAC;
CAPACITOR SWITCHING SCHEME;
LOW-ENERGY;
D O I:
10.1016/j.mejo.2017.02.009
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This paper presents a 6-bit sub-radix-2 redundant V-CM-based SAR ADC for BLE transceiver applications. The basic trend for BLE applications is to reduce area and power consumption. In order to reduce switching power consumption, V-CM-based straightforward CDAC is applied. Custom-designed 600 aF unit capacitor minimizes the area and analog power consumption of the ADC. Sub-radix-2 redundant architecture, as well as digital calibration, is applied for CDAC which guarantees digitally correctable static nonlinearities of the converter and dynamic errors in the conversion process occurs due to small capacitor sizes. The structure applies an inverter type comparator to reduce the area. The prototype ADC is fabricated and measured in a 55 nm CMOS process and achieves 5.31-5.89 ENOB at 4 MS/s sampling frequency. SNDR and SFDR for Nyquist input frequency are 33.73 dB and 40.2 dB respectively. The current consumption is 3.7 mu A from a 1.0 V supply, which corresponds to 23 fJ/step FOM. The active area of the core ADC is 100 mu m x 45 mu m.
机构:
Division of Circuits and Systems,Department of Electronic Engineering,Tsinghua UniversityDivision of Circuits and Systems,Department of Electronic Engineering,Tsinghua University
杨华中
汪蕙
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h-index: 0
机构:
Division of Circuits and Systems,Department of Electronic Engineering,Tsinghua UniversityDivision of Circuits and Systems,Department of Electronic Engineering,Tsinghua University
机构:
Chongqing Univ, Coll Microelect & Commun Engn, Chongqing, Peoples R China
Shenzhen State Micro Elect Co Ltd, Shenzhen, Peoples R ChinaChongqing Univ, Coll Microelect & Commun Engn, Chongqing, Peoples R China
Zhang, Panpan
Feng, Wenjiang
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机构:
Chongqing Univ, Coll Microelect & Commun Engn, Chongqing, Peoples R ChinaChongqing Univ, Coll Microelect & Commun Engn, Chongqing, Peoples R China
Feng, Wenjiang
Wang, Peng
论文数: 0引用数: 0
h-index: 0
机构:
Chongqing Univ, Coll Optoelect Engn, Chongqing, Peoples R ChinaChongqing Univ, Coll Microelect & Commun Engn, Chongqing, Peoples R China
Wang, Peng
Zhao, Peng
论文数: 0引用数: 0
h-index: 0
机构:
Shenzhen State Micro Elect Co Ltd, Shenzhen, Peoples R ChinaChongqing Univ, Coll Microelect & Commun Engn, Chongqing, Peoples R China
Zhao, Peng
Song, Yang
论文数: 0引用数: 0
h-index: 0
机构:
Shenzhen State Micro Elect Co Ltd, Shenzhen, Peoples R ChinaChongqing Univ, Coll Microelect & Commun Engn, Chongqing, Peoples R China
机构:
Seoul Natl Univ Sci & Technol, Dept Elect & IT Media Engn, Seoul 01811, South Korea
Samsung Elect, Memory Div, Flash Design Team, Hwaseong 18448, South KoreaSeoul Natl Univ Sci & Technol, Dept Elect & IT Media Engn, Seoul 01811, South Korea