BTI Recovery in 22nm Tri-gate Technology

被引：0

作者：

Ramey, S. ^{[1
]}

Hicks, J. ^{[1
]}

Liyanage, L. S. ^{[1
]}

Novak, S. ^{[1
]}

机构：

[1] Intel Corp, Log Technol Dev Qual & Reliabil, Hillsboro, OR 97124 USA

来源：

2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

BTI recovery in tri-gate devices matches data and model predictions from planar devices, indicating a consistent physical basis for the mechanism and no influence from transistor architecture features such as crystal orientation, confinement, and vertical sidewalls. This consistency enables extending existing models established on planar devices to capture temperature and voltage dependencies of recovery. A new experimental technique allows extraction of an effective activation energy for recovery. The observation of complete recovery demonstrates that no permanent damage occurs during stress.

引用

页数：6

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