InP Schottky junctions for zero bias detector diodes

被引：50
|
作者：
Horváth, ZJ
Rakovics, V
Szentpáli, B
Püspöki, S
Zd'ánsky, K
机构：
[1] Hungarian Acad Sci & Mat Sci, Tech Phys Res Inst, MFA, H-1525 Budapest 114, Hungary
[2] Acad Sci Czech Republic, Inst Radio Engn & Elect, Prague 18251 8, Czech Republic
来源：
VACUUM | 2003年 / 71卷 / 1-2期
关键词：
InP; Schottky junction; current mechanisms; temperature dependence;
D O I：
10.1016/S0042-207X(02)00723-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cr + Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na2S + HF surface treatment for zero bias microwave detector purposes. The diodes were studied by current-voltage and capacitance-voltage measurements in the temperature range of 80-320 K. The obtained I-V barrier heights were in the range of 0.38-0.49 eV with ideality factors of 1.08-1.24. The peculiarities of the current-voltage characteristics are interpreted in terms of the thermionic emission, the thermionic-field emission, and the field emission current mechanisms. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：113 / 116
页数：4
相关论文
共 50 条
  • [41] Three-dimensional shaping of sub-micron GaAs Schottky junctions for zero-bias terahertz rectification
    Casini, R.
    Di Gaspare, A.
    Giovine, E.
    Notargiacomo, A.
    Ortolani, M.
    Foglietti, V.
    APPLIED PHYSICS LETTERS, 2011, 99 (26)
  • [42] EFFECTS OF UNIAXIAL COMPRESSION ON ZERO-BIAS ANOMALY IN P-SILICON SCHOTTKY-BARRIER TUNNEL JUNCTIONS
    MORA, NA
    BERMON, S
    POLLAK, FH
    PHYSICAL REVIEW LETTERS, 1972, 28 (04) : 225 - &
  • [43] CONTROLLED BARRIER HEIGHT INP SCHOTTKY DIODES PREPARED BY SULFUR DIFFUSION
    COLEMAN, JJ
    APPLIED PHYSICS LETTERS, 1977, 31 (04) : 283 - 285
  • [44] BARRIER HEIGHT OF INP SCHOTTKY DIODES PREPARED BY MEANS OF UV OXIDATION
    NAKAMURA, J
    NIU, H
    KISHINO, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (02): : 699 - 703
  • [45] Barrier height of InP Schottky diodes prepared by means of UV oxidation
    Nakamura, Junichi, 1600, (32):
  • [46] Planar InP-based Schottky barrier diodes for terahertz applications
    周静涛
    杨成樾
    葛霁
    金智
    Journal of Semiconductors, 2013, (06) : 54 - 57
  • [47] Planar InP-based Schottky barrier diodes for terahertz applications
    Zhou Jingtao
    Yang Chengyue
    Ge Ji
    Jin Zhi
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (06)
  • [48] Mechanism of reverse current in the Al/p-InP Schottky diodes
    Pipinys, PA
    Rimeika, AK
    Lapeika, VA
    Pipiniene, AV
    SEMICONDUCTORS, 2001, 35 (02) : 181 - 184
  • [49] Inductively coupled plasma etch damage in GaAs and InP Schottky diodes
    Lee, JW
    Abernathy, CR
    Pearton, SJ
    Ren, F
    Hobson, WS
    Shul, RJ
    Constantine, C
    Barratt, C
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (04) : 1417 - 1422
  • [50] The thermal equilibrium changes on reverse bias annealing in Schottky diodes
    Serin, T
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (11) : 1451 - 1454
12345