InP Schottky junctions for zero bias detector diodes

被引：50
|
作者：
Horváth, ZJ
Rakovics, V
Szentpáli, B
Püspöki, S
Zd'ánsky, K
机构：
[1] Hungarian Acad Sci & Mat Sci, Tech Phys Res Inst, MFA, H-1525 Budapest 114, Hungary
[2] Acad Sci Czech Republic, Inst Radio Engn & Elect, Prague 18251 8, Czech Republic
来源：
VACUUM | 2003年 / 71卷 / 1-2期
关键词：
InP; Schottky junction; current mechanisms; temperature dependence;
D O I：
10.1016/S0042-207X(02)00723-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cr + Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na2S + HF surface treatment for zero bias microwave detector purposes. The diodes were studied by current-voltage and capacitance-voltage measurements in the temperature range of 80-320 K. The obtained I-V barrier heights were in the range of 0.38-0.49 eV with ideality factors of 1.08-1.24. The peculiarities of the current-voltage characteristics are interpreted in terms of the thermionic emission, the thermionic-field emission, and the field emission current mechanisms. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：113 / 116
页数：4
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