CHARACTERISTICS OF INP MIS SCHOTTKY DIODES PREPARED BY PLASMA OXIDATION

被引：7

|

作者：

IMAI, Y

ISHIBASHI, T

IDA, M

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 01期

关键词：

D O I：

10.1149/1.2123761

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：221 / 224

页数：4

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