CHARACTERISTICS OF INP MIS SCHOTTKY DIODES PREPARED BY PLASMA OXIDATION

被引：7
|
作者：
IMAI, Y
ISHIBASHI, T
IDA, M
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 01期
关键词：
D O I：
10.1149/1.2123761
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：221 / 224
页数：4
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