CHARACTERISTICS OF INP MIS SCHOTTKY DIODES PREPARED BY PLASMA OXIDATION

被引：7
|
作者：
IMAI, Y
ISHIBASHI, T
IDA, M
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 01期
关键词：
D O I：
10.1149/1.2123761
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：221 / 224
页数：4
相关论文
共 50 条
  • [21] ELECTRICAL CHARACTERISTICS OF AU-TI-(N-TYPE)INP SCHOTTKY DIODES
    ROBERTS, GG
    PANDE, KP
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (10) : 1323 - 1328
  • [22] Electrical properties of Au/Bn/InP MIS diodes
    Baehr, O.
    Barrada, M.
    Bath, A.
    Lepley, B.
    Thevenin, P.
    Schoonman, J.
    Journal of Non-Crystalline Solids, 1995, 187
  • [23] INP (MIS) SCHOTTKY-BARRIER SOLAR-CELLS
    KAMIMURA, K
    SUZUKI, T
    KUNIOKA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 203 - 206
  • [24] InP Schottky junctions for zero bias detector diodes
    Horváth, ZJ
    Rakovics, V
    Szentpáli, B
    Püspöki, S
    Zd'ánsky, K
    VACUUM, 2003, 71 (1-2) : 113 - 116
  • [25] Electrical characteristics of (n)-InP MIS diodes with a POxNy interfacial layer deposited at low temperature
    Hbib, H
    Bonnaud, O
    Fortin, B
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (05) : 609 - 613
  • [26] DIFFUSION-PROFILE MEASUREMENT IN INP WITH SCHOTTKY DIODES
    AYTAC, S
    SCHLACHETZKI, A
    SOLID-STATE ELECTRONICS, 1982, 25 (11) : 1135 - &
  • [27] The frequency dependent electrical characteristics of Sn/p-InP Schottky barrier diodes (SBDs)
    Korucu, D.
    Altindal, S.
    Mammadov, T. S.
    Oezcelik, S.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2008, 2 (09): : 525 - 529
  • [28] The frequency dependent electrical characteristics of Sn/p-InP Schottky barrier diodes (SBDs)
    Physics Department, Faculty of Arts and Sciences, Gazi University, 06500, Ankara, Turkey
    不详
    Opto. Adv. Mat. Rap. Comm., 2008, 9 (525-529):
  • [29] TEMPERATURE-DEPENDENCE OF THE ELECTRICAL CHARACTERISTICS IN AU-N-TYPE INP SCHOTTKY DIODES
    HATTORI, K
    YAMASAKI, T
    URAOKA, Y
    FUJII, T
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7020 - 7024
  • [30] SCHOTTKY DIODES ON N-TYPE INP WITH CDOX INTERFACIAL LAYERS GROWN BY THE ADSORPTION AND OXIDATION METHOD
    SAWATARI, H
    ODA, O
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (10) : 5004 - 5006
12345