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- [1] ELECTRICAL-PROPERTIES OF AU/BN/INP MIS DIODESJOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 187 : 409 - 414BAEHR, OBARRADA, MBATH, ALEPLEY, BTHEVENIN, PSCHOONMAN, J
- [2] ELECTRICAL-PROPERTIES OF INP MIS DEVICESJOURNAL OF PHYSICS D-APPLIED PHYSICS, 1983, 16 (06) : 1099 - 1107EFTEKHARI, GTUCK, BDECOGAN, D
- [3] Electrical properties of MIS structures with BN insulating layerDIAMOND AND RELATED MATERIALS, 1998, 7 (06) : 817 - 820Dmowski, KLepley, BBath, ALosson, EThevenin, PNabil, SA
- [4] INTERFACE PROPERTIES OF HIGH BARRIER HEIGHT MIS DIODES ON INPFIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES, 1989, 1144 : 217 - 223LEE, YSANDERSON, WA
- [5] Electrical properties of sulfur passivated MIS GaAs diodesPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 159 (02): : 563 - 567Eftekhari, G
- [6] ELECTRICAL-PROPERTIES OF MIS STRUCTURES ON INP PASSIVATED WITH AN OXIDEREVUE DE PHYSIQUE APPLIQUEE, 1989, 24 (02): : 189 - 194JOSEPH, JMAHDJOUB, AROBACH, Y
- [7] ELECTRICAL-PROPERTIES OF INXPNY-INP MIS STRUCTURESFIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES, 1989, 1144 : 242 - 249IWASE, YARAI, FSUGANO, T
- [8] Electrical and dielectric properties of MIS Schottky diodes at low temperaturesMICROELECTRONIC ENGINEERING, 2006, 83 (11-12) : 2551 - 2557Tataroglu, A.
- [9] ON THE INFLUENCE OF THE THIN INTERFACIAL OXIDE LAYER ON THE ELECTRICAL AND PHOTOVOLTAIC PROPERTIES OF AU OXIDE P-INP DIODESSEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (11) : 736 - 741SONG, YPVANMEIRHAEGHE, RLLAFLERE, WHCARDON, F
- [10] Electrical characteristics of (n)-InP MIS diodes with a POxNy interfacial layer deposited at low temperatureSEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (05) : 609 - 613Hbib, HBonnaud, OFortin, B