Simulation of RF noise in MOSFETs using different transport models

被引：0
|
作者：
Schenk, A
Schmithüsen, B
Wettstein, A
Erlebach, A
Brugger, S
Bufler, FM
Feudel, T
Fichtner, W
机构：
[1] Swiss Fed Inst Technol, Inst Integrierte Syst, CH-8092 Zurich, Switzerland
[2] ISE Integrated Syst Engn AG, CH-8008 Zurich, Switzerland
[3] AMD Saxony, D-01109 Dresden, Germany
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2003年 / E86C卷 / 03期
关键词：
device simulation; RF noise; impedance field method; Langevin equation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RF noise in quarter-micron nMOSFETs is analysed on the device level based on Shockley's impedance field method. The impact of different transport models and physical parameters is discussed in detail. Well-calibrated drift-diffusion and energy-balance models give very similar results for noise current spectral densities and noise figures. We show by numerical simulations with the general-purpose device simulator DESSIS_(ISE) that the hot-electron effect on RF noise is unimportant under normal operating conditions and that thermal substrate noise is dominant below 0.5 GHz. The contribution of energy-current fluctuations to the terminal noise is found to be negligible. Application of noise sources generated in bulk full-band Monte Carlo simulations changes the noise figures considerably, which underlines the importance of proper noise source models for far-from-equilibrium conditions.
引用
收藏
页码：481 / 489
页数：9
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