RF MOSFETs noise modeling - the wave approach

被引：0
|
作者：
Pronic, OR [1 ]
Markovic, VV [1 ]
机构：
[1] Fac Elect Engn, YU-18000 Nish, Serbia Monteneg, Yugoslavia
来源：
TELSIKS 2003: 6TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICE, VOLS 1 AND 2, PROCEEDINGS OF PAPERS | 2003年
关键词：
RF MOSFET; noise temperatures; noise wave parameters;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a new procedure for noise modeling of microwave MOSFETs based on the wave approach. The procedure is based on circuit theory concepts and on similar kind of analysis we proposed earlier for MESFETs/HEMTs noise modeling. Noise wave parameters are derived in terms of three equivalent noise temperatures. Noise parameter characteristics obtained by proposed modeling procedure are compared with the measured ones for a typical RF MOSFET.
引用
收藏
页码：569 / 572
页数：4
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