Microscopic Modeling of RF Noise in Laterally Asymmetric Channel MOSFETs

被引：3
|
作者：
Rengel, Raul [1 ]
Martin, Maria J. [1 ]
Danneville, Francois [2 ]
机构：
[1] Univ Salamanca, Dept Appl Phys, E-37008 Salamanca, Spain
[2] CNRS, Inst Elect Microelect & Nanotechnol, UMR 8520, F-59652 Villeneuve Dascq, France
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 01期
关键词：
Intrinsic noise sources; laterally asymmetric channel (LAC) MOSFET; minimum noise figure (N F-min); Monte Carlo modeling; RF performance; PERFORMANCE;
D O I：
10.1109/LED.2010.2082488
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A study of the high-frequency noise performance of laterally asymmetric channel (LAC) MOSFETs and conventional devices is presented. Particular attention is paid to the investigation of the influence of the intrinsic noise sources on the noise performance of the transistors. The improvement in the minimum noise figure of the LAC transistor as compared to a conventional MOSFET is analyzed in terms of reduced induced gate noise, higher cross correlation of drain and gate current fluctuations, and the enhancement of the device transconductance.
引用
收藏
页码：72 / 74
页数：3
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