Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation

被引:16
|
作者
Chen, Yongbo [1 ]
Xu, Ruimin [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Elect Engn, EHF Key Lab Fundamental Sci, Chengdu 611731, Peoples R China
关键词
junctionless MOSFET; Monte Carlo simulation; small-signal equivalent circuit; analog/RF; noise; FIELD-EFFECT TRANSISTORS; SIGNAL EQUIVALENT-CIRCUIT; INVERSION; DEVICES; DESIGN;
D O I
10.1002/jnm.1938
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The dynamic characteristics and high-frequency noise performance of junctionless (JL) metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated using a full-band Monte Carlo simulator. A detailed comparison with conventional inversion mode (IM) MOSFETs is presented. The results of the radio frequency performance indicate that, compared with the traditional IM MOSFET, the JL transistor exhibits lower drain current (I-ds), transconductance (g(m)), and cut-off frequency (f(t)) because of its lower electron velocity in the high doping channel. However, owing to a reduced output conductance (g(ds)) and a larger C-gs/C-gd ratio (C-gs is the gate-to-source capacitance; C-gd is the gate-to-drain capacitance), the JL MOSFET presents an improvement in the intrinsic voltage gain (A(vo)) and maximum frequency of oscillation (f(max)) in comparison with the IM transistor, which makes it be a viable option for the high-voltage and power gain analog/radio frequency applications. The results of the noise characteristics show that the JL MOSFET exhibits higher minimum noise figure (NFmin) and equivalent noise resistance (R-n), indicating an inferior noise performance. Copyright (C) 2013 John Wiley & Sons, Ltd.
引用
收藏
页码:822 / 833
页数:12
相关论文
共 50 条
  • [1] Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies
    Rengel, R
    Mateos, J
    Pardo, D
    González, T
    Martín, MJ
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (11) : 939 - 946
  • [2] Performance Analysis of Junctionless Transistors Based on Monte Carlo Simulation
    Choi, Jaeil
    Nagai, Katsuyuki
    Koba, Shunsuke
    Tsuchiya, Hideaki
    Ogawa, Matsuto
    [J]. APPLIED PHYSICS EXPRESS, 2012, 5 (05)
  • [3] Analysis of 3D Channel Current Noise in Small Nanoscale MOSFETs Using Monte Carlo Simulation
    Zhang, Wenpeng
    Wei, Qun
    Jia, Xiaofei
    He, Liang
    [J]. NANOMATERIALS, 2024, 14 (16)
  • [4] RF/Analog Performance of Novel Junctionless Vertical MOSFETs
    Tai, Chih-Hsuan
    Lin, Jyi-Tsong
    Eng, Yi-Chuen
    [J]. INTEGRATED FERROELECTRICS, 2011, 129 : 45 - 51
  • [5] RF Performance of Ultra Low Power Junctionless MOSFETs
    Ghosh, Dipankar
    Parihar, Mukta Singh
    Kranti, Abhinav
    [J]. 2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013), 2013, : 787 - 789
  • [6] A Monte Carlo investigation of the RF performance of partially-depleted SOI MOSFETs
    Rengel, R
    Martín, MJ
    Dambrine, G
    Danneville, F
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (03) : 273 - 278
  • [7] Monte Carlo analysis of the dynamic behavior of III-V MOSFETs for low-noise RF applications
    Shi, Ming
    Saint-Martin, Jerome
    Bournel, Arnaud
    Querlioz, Damien
    Wichmann, Nicolas
    Bollaert, Sylvain
    Danneville, Francois
    Dollfus, Philippe
    [J]. SOLID-STATE ELECTRONICS, 2013, 87 : 51 - 57
  • [8] NOISE ANALYSIS OF AIRCRAFT DEPARTURE PROCEDURES USING MONTE CARLO SIMULATION
    Smits, Tommy
    Hartjes, Sander
    Mitici, Mihaela
    [J]. 2018 WINTER SIMULATION CONFERENCE (WSC), 2018, : 2321 - 2329
  • [9] Analysis of Barkhausen noise using Monte Carlo simulation for nondestructive evaluation
    Yamaguchi, K
    Tanaka, S
    Watanabe, H
    Nittono, O
    Yamada, K
    Takagi, T
    [J]. JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2005, 161 (1-2) : 338 - 342
  • [10] Simulation of RF noise in MOSFETs using different transport models
    Schenk, A
    Schmithüsen, B
    Wettstein, A
    Erlebach, A
    Brugger, S
    Bufler, FM
    Feudel, T
    Fichtner, W
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 2003, E86C (03) : 481 - 489