Low Frequency Noise in Nanoscale pMOSFETs with Strain Induced Mobility Enhancement and Dynamic Body Biases

被引：2

作者：

Yeh, Kuo-Liang ^{[1
]}

Ku, Chih-You ^{[1
]}

Hong, Wei-Lun ^{[1
]}

Guo, Jyh-Chyurn ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect Engn, Hsinchu, Taiwan

来源：

2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年

关键词：

Low frequency noise; strain; mobility; pMOSFET; FLICKER NOISE;

D O I：

10.1109/MWSYM.2009.5165814

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Local strain effect on low frequency noise (LFN) of pMOSFETs with gate length down to 60 nm was investigated in this paper. Novel and interesting results were identified from the pMOSFETs adopting embedded SiGe (e-SiGe) in source/drain for uni-axial compressive stress. This local compressive strain can realize significant mobility enhancement and desired current boost in nanoscale pMOSFETs. However, the dramatic increase of LFN emerges as a penalty traded off with mobility enhancement. The escalated LFN may become a critical killer to analog and RF circuits. Forward body biases (FBB) can improve the effective mobility (mu(eff)) and reduce LFN attributed to reduced normal field (E-eff). However, the benefit from FBB becomes insignificant in strained pMOSFETs with sub-100 nm gate length.

引用

页码：785 / 788

页数：4

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