Low-frequency noise in SiGe channel pMOSFETs on ultra-thin body SOI with Ni-silicided source/drain

被引：0

作者：

von Haartman, M ^{[1
]}

Hållstedt, J ^{[1
]}

Seger, J ^{[1
]}

Malm, BG ^{[1
]}

Hellström, PE ^{[1
]}

Östling, M ^{[1
]}

机构：

[1] Royal Inst Technol, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden

来源：

NOISE AND FLUCTUATIONS | 2005年 / 780卷

关键词：

1/f noise; low-frequency noise; SiGe; silicon-on-insulator (SOI); fully depleted (FD); Schottky-Barrier (SB); MOSFETs;

D O I：

暂无

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

The low-frequency noise in buried SiGe channel pMOSFETs fabricated on ultra-thin body silicon-on-insulator (SOI) substrates is investigated. The total thickness of the Si/SiGe/Si body structure which is fully depleted (FD), is 20 nm. The low-frequency noise properties are compared with FD SOI pMOSFETs with a 20 nm Si body. The effect of the Ni-silicide used in the Source/Drain were also studied, especially the case of Schottky-Barrier (SB) MOSFETs when the Ni-silicide is formed at the edges of the channel.

引用

页码：307 / 310

页数：4

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