Reduction of Low Frequency Noise of Buried Channel PMOSFETs With Retrograde Counter Doping Profiles

被引：0
|
作者：
Fujii, Shuntaro [1 ]
Sakamoto, Toshiro [2 ]
Morita, Soichi [3 ]
Miyazaki, Tsutomu [4 ]
机构：
[1] Asahi Kasei Microdevices Corp, Prod Platform Technol Grp, Yokohama, Kanagawa 2220033, Japan
[2] Asahi Kasei Microdevices Corp, Device & Proc Applicat Dev Unit, Yokohama, Kanagawa 2220033, Japan
[3] Asahi Kasei Microdevices Corp, Procurement Dept, Chiyoda Ku, Tokyo 1000006, Japan
[4] Asahi Kasei Microdevices Corp, Qual Management Dept, Nobeoka, Miyazaki 8820031, Japan
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2024年 / 12卷
关键词：
Buried channel; epitaxial; low frequency noise; PMOS; retrograde counter doping profile; RANDOM TELEGRAPH NOISE; FLICKER NOISE; P-MOSFETS; SILICON; BORON; 1/F;
D O I：
10.1109/JEDS.2024.3430308
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impacts of retrograde counter doping (RCD) profiles on low frequency noise (LFN) of buried channel (BC) PMOSFETs were investigated. RCD profiles were formed using heavy ion implantation. The RCD profile reduced LFN by more than 50%. The origin of LFN reduction in the RCD device was investigated using TCAD simulation. It was found that both RCD profile itself and the polarity of Si surface contributed to the deeper channel position and larger energy barrier between Si surface and channel position.
引用
收藏
页码：534 / 540
页数：7
相关论文
共 50 条
  • [1] Strong low-frequency noise in buried-channel pMOSFETs under inversion conditions
    Lukyanchikova, N
    Petrichuk, M
    Garbar, N
    Simoen, E
    Claeys, C
    [J]. SIXTH QUANTUM 1/F NOISE AND OTHER LOW FREQUENCY FLUCTUATIONS IN ELECTRON DEVICES SYMPOSIUM, 1996, (371): : 134 - 138
  • [2] Low-frequency noise characteristics of hot carrier-stressed buried-channel pMOSFETs
    Jang, SL
    Chen, HK
    Chang, KM
    [J]. SOLID-STATE ELECTRONICS, 1998, 42 (03) : 411 - 418
  • [3] Low-frequency noise analysis of Si/SiGe channel pMOSFETs
    Li, PW
    Liao, WM
    [J]. SOLID-STATE ELECTRONICS, 2002, 46 (12) : 2281 - 2285
  • [4] Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs
    Simoen, Eddy
    Veloso, Anabela
    Matagne, Philippe
    Claeys, Cor
    [J]. SOLID-STATE ELECTRONICS, 2023, 200
  • [5] Formation of deep sub-micron buried channel pMOSFETs with plasma doping
    Felch, SB
    Brunco, DP
    Lee, BS
    Ahmad, A
    Prall, K
    Chapek, DL
    [J]. ION IMPLANTATION TECHNOLOGY - 96, 1997, : 753 - 756
  • [6] Static and low frequency noise characterization in surface- and buried-mode 0.1 μm PMOSFETS
    Fadlallah, M
    Ghibaudo, G
    Jomaah, J
    Guégan, G
    [J]. SOLID-STATE ELECTRONICS, 2003, 47 (07) : 1155 - 1160
  • [7] Low Frequency Noise in Surface and Buried Channel Nanometric CMOS transistors
    Malits, Maria
    Brouk, Igor
    Nemirovsky, Yael
    Birman, Adi
    Lahav, Asaf
    Fenigstein, Amos
    [J]. 2014 IEEE 28TH CONVENTION OF ELECTRICAL & ELECTRONICS ENGINEERS IN ISRAEL (IEEEI), 2014,
  • [8] 1/f γ Low Frequency Noise Model for Buried Channel MOSFET
    Shen, Shi
    Yuan, Jie
    [J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 (01): : 126 - 133
  • [9] Investigation of Low Frequency Noise in Uniaxial Strained PMOSFETs
    Kuo, Jack J. -Y.
    Chen, William P. -N.
    Su, Pin
    [J]. PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS, 2009, : 82 - 83
  • [10] Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs
    von Haartman, M.
    Malm, B. G.
    Hellstrom, P.-E.
    Ostling, M.
    Grasby, T. J.
    Whall, T. E.
    Parker, E. H. C.
    Lyutovich, K.
    Oehme, M.
    Kasper, E.
    [J]. SOLID-STATE ELECTRONICS, 2007, 51 (05) : 771 - 777
12345