Low-frequency noise characteristics of hot carrier-stressed buried-channel pMOSFETs

被引：3
|
作者：
Jang, SL
Chen, HK
Chang, KM
机构：
[1] Natl Taiwan Inst Technol, Dept Elect Engn, Taipei 106, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
来源：
SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 03期
关键词：
D O I：
10.1016/S0038-1101(97)00209-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Prestress and poststress low-frequency noise characteristics of buried-channel LDD pMOS-FETs have been studied. The devices were stressed at low gate and high drain bias, and the poststress drain current increases due to the hot-electron induced channel shortening effect. The noise measurements were carried out between 10 Hz and 100 kHz, 1/f(1.2) and generation-recombination current noises have been found in the drain current noises. The poststress 1/f(1.2) drain current noise increases in both the linear and saturation regime. This behavior is attributed to the increase of interface states and oxide electron charges after stress. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：411 / 418
页数：8
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