Reduction of Low Frequency Noise of Buried Channel PMOSFETs With Retrograde Counter Doping Profiles

被引：0
|
作者：
Fujii, Shuntaro [1 ]
Sakamoto, Toshiro [2 ]
Morita, Soichi [3 ]
Miyazaki, Tsutomu [4 ]
机构：
[1] Asahi Kasei Microdevices Corp, Prod Platform Technol Grp, Yokohama, Kanagawa 2220033, Japan
[2] Asahi Kasei Microdevices Corp, Device & Proc Applicat Dev Unit, Yokohama, Kanagawa 2220033, Japan
[3] Asahi Kasei Microdevices Corp, Procurement Dept, Chiyoda Ku, Tokyo 1000006, Japan
[4] Asahi Kasei Microdevices Corp, Qual Management Dept, Nobeoka, Miyazaki 8820031, Japan
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2024年 / 12卷
关键词：
Buried channel; epitaxial; low frequency noise; PMOS; retrograde counter doping profile; RANDOM TELEGRAPH NOISE; FLICKER NOISE; P-MOSFETS; SILICON; BORON; 1/F;
D O I：
10.1109/JEDS.2024.3430308
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impacts of retrograde counter doping (RCD) profiles on low frequency noise (LFN) of buried channel (BC) PMOSFETs were investigated. RCD profiles were formed using heavy ion implantation. The RCD profile reduced LFN by more than 50%. The origin of LFN reduction in the RCD device was investigated using TCAD simulation. It was found that both RCD profile itself and the polarity of Si surface contributed to the deeper channel position and larger energy barrier between Si surface and channel position.
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页码：534 / 540
页数：7
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