Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

被引：2

作者：

Simoen, Eddy ^{[1
]}

Veloso, Anabela ^{[2
]}

Matagne, Philippe ^{[2
]}

Claeys, Cor ^{[3
]}

机构：

[1] Univ Ghent, Dept Solid State Sci, Krijgslaan 281-S1, B-9000 Ghent, Belgium

[2] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[3] ClaRoo Consulting, Leuven, Belgium

来源：

SOLID-STATE ELECTRONICS | 2023年 / 200卷

关键词：

Silicon nanowires; SOI; Low-frequency noise; Nanowire doping;

D O I：

10.1016/j.sse.2022.108576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the impact of the channel doping density on the low-frequency noise of silicon Gate-All-Around (GAA) Vertical Nanowire (VNW) pMOSFETs on Silicon-on-Insulator (SOI) substrates will be described and discussed. It is demonstrated that the dominant fluctuation mechanism of the 1/f noise in the subthreshold regime changes from number (& UDelta;n) to mobility (& UDelta;& mu;) fluctuations with increasing p-type doping density of the silicon nanowires. At the same time, the lowest input-referred voltage noise Power Spectral Density is observed for an intermediate boron concentration in the nanowire of 5 x 1018 cm-3.

引用

页数：6

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