Non-Contact Probes for On-Wafer Characterization of Sub-Millimeter-Wave Devices and Integrated Circuits

被引：45
|
作者：
Caglayan, Cosan [1 ]
Trichopoulos, Georgios C. [1 ]
Sertel, Kubilay [1 ]
机构：
[1] Ohio State Univ, Electrosci Lab, Columbus, OH 43212 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2014年 / 62卷 / 11期
关键词：
Measurement techniques; millimeter-wave (mmW) measurements; mmW technology; sub-mmW measurements; sub-mmW propagation; sub-mmW technology;
D O I：
10.1109/TMTT.2014.2356176
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a novel non-contact metrology approach for on-wafer characterization of sub-millimeter-wave devices, components, and integrated circuits. Unlike existing contact probes that rely on small metallic tips that make physical contact with the device on the chip, the new non-contact probes are based on electromagnetic coupling of vector network analyzer (VNA) test ports into the coplanar waveguide environment of integrated devices and circuits. Efficient signal coupling is achieved via a quasi-optical link between the VNA ports and planar antennas that are monolithically integrated with the test device. Experimental validation of the non-contact device metrology system is presented for the first time to demonstrate the accuracy and repeatability of proposed approach for the 325-500-GHz (WR2.2) and 500-750-GHz (WR1.5) bands.
引用
收藏
页码：2791 / 2801
页数：11
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