Thermal Modeling of 3-D Stacked DRAM Over SiGe HBT BiCMOS CPU

被引:0
|
作者
Clarke, Ryan [1 ]
Jacob, Philip [2 ]
Erdogan, Okan [3 ]
Belemijian, Paul [4 ]
Raman, Srikumar [1 ]
Leroy, Mitchell R. [1 ]
Neogi, Tuhin Guha [5 ]
Kraft, Russell P. [1 ]
Borca-Tasciuc, Diana-Andra [6 ]
McDonald, John F. [1 ]
机构
[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[3] Istanbul Tech Univ, Natl High Performance Ctr Turkey, TR-34469 Istanbul, Turkey
[4] Naval Res Lab, Baltimore, MD 21227 USA
[5] GlobalFoundries, Malta, NY 12020 USA
[6] Rensselaer Polytech Inst, Dept Mech Aerosp & Nucl Engn, Troy, NY 12180 USA
来源
IEEE ACCESS | 2015年 / 3卷
基金
美国国家科学基金会;
关键词
Microprocessors; memory; simulation; modeling; Moore's law; 3D IC; thermal management; thermal analysis; DIAMOND; CONDUCTIVITY;
D O I
10.1109/ACCESS.2015.2396474
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
We have previously evaluated the feasibility of a serial code accelerator core with 3-D DRAM stacked on the core operating at high frequencies. While operating at such high frequencies (> 24 GHz), there are concerns with removing heat from the 3-D stack. We propose the use of thin diamond sheets, which have high thermal conductivity, as a heat spreader by bonding it close to the processor core substrate and memory stacks. We show, through thermal modeling using COMSOL finite-element analysis tools, the feasibility of diamond as an effective heat spreader in a processor-memory 3-D stack.
引用
收藏
页码:43 / 54
页数:12
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