Hot-carrier-induced degradation on 0.1 μm partially depleted silicon-on-insulator complementary metal-oxide-semiconductor field-effect-transistor

Hot-carrier-induced degradation of partially depleted silicon-on-insulator (SOI) complementary metal-oxide-semiconductor field-effect-transistors (CMOSFET)s at various applied voltages and temperatures was investigated with respect to 0.1 mum body-contact (BC-SOI) and floating-body (FB-SOI) devices with 2 nm gate oxide. In our experiment, it is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) and the parasitic bipolar transistor effect (PBT) affect the hot-carrier-induced degradation of device characteristics. For FB-SOI. nMOSFET maximum hot-carrier-induced degradation is inversely temperature dependent compared to BC-SOI nMOSFET. Without apparent FBE on pMOSFET, the worst hot-carrier stress condition and temperature dependence of maximum hot-carrier-induced degradation are similar for both 0.1 mum SOI pMOSFETs.