Hot-carrier induced photon-emission in silicon metal-oxide-semiconductor field-effect-transistor

被引：3
|
作者：
Xu, Kaikai [1 ]
Li, G. P. [2 ]
机构：
[1] Univ Calif Irvine, INRF, Irvine, CA 92697 USA
[2] Calif Inst Telecommun & Informat Technol Calit 2, Irvine, CA USA
来源：
XXVIII INTERNATIONAL CONFERENCE ON PHOTONIC, ELECTRONIC AND ATOMIC COLLISIONS (ICPEAC) | 2014年 / 488卷
关键词：
D O I：
10.1088/1742-6596/488/13/132036
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The phenomenon of light emission from silicon metal-oxide-semiconductor field-effect-transistor (Si MOSEET) operating in the saturation mode is analyzed by a novel model of physical mechanism.
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页数：1
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